2N5684

Configuration : Single
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray
Collector- Emitter Voltage VCEO Max : 80 V
DC Collector/Base Gain hfe Min : 15
Maximum Operating Frequency : 2 MHz (Min)
Maximum DC Collector Current : 50 A


Specifications

Ratings	Symbol	2N5683	2N5684	Unit
Collector-Emitter Voltage	VCEO	60	80	Vdc
Collector-Base Voltage	VCBO	60	80	Vdc
Emitter-Base Voltage	VEBO	5.0		Vdc
Base Current	IB	15		Adc
Collector Current	IC	50		Adc
Total Power Dissipation @ TA = +250C (1) @ TC = +1000C (2)	PT	300 171		W W
Operating & Storage Temperature Range	TJ, Tstg	-65 to +200		0C

THERMAL CHARACTERISTICS

Characteristics	Symbol	Max.	Unit
Thermal Resistance, Junction-to-Case	RqJC	0.584	0C/W

1) Derate linearly 1.715 W/⁰C between T_C = +25⁰C and T_C = +200⁰C

Parameters:

Technical/Catalog Information	2N5684
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	50A
Power - Max	300mW
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 25A, 2V
Vce Saturation (Max) @ Ib, Ic	1V @ 2.5A, 25A
Frequency - Transition	2MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N5684 2N5684 2N5684OS ND 2N5684OSND 2N5684OS