2N5680

Transistors Bipolar (BJT) PNP Ampl/Switch

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2N5680 Picture
SeekIC No. : 00209766 Detail

2N5680: Transistors Bipolar (BJT) PNP Ampl/Switch

floor Price/Ceiling Price

US $ 1.3~1.64 / Piece | Get Latest Price
Part Number:
2N5680
Mfg:
Central Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~500
  • 500~1000
  • 1000~2000
  • Unit Price
  • $1.64
  • $1.42
  • $1.3
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/6/8

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 120 V
Emitter- Base Voltage VEBO : 4 V Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 40 at 250 mA at 2 V Configuration : Single
Maximum Operating Frequency : 30 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-39
Packaging : Box    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 4 V
Packaging : Box
Maximum DC Collector Current : 1 A
Maximum Operating Frequency : 30 MHz
Collector- Emitter Voltage VCEO Max : 120 V
Package / Case : TO-39
DC Collector/Base Gain hfe Min : 40 at 250 mA at 2 V


Features:

·SGS-THOMSON PREFERRED SALESTYPE
·NPN TRANSISTOR





Application

·GENERAL PURPOSE SWITCHING
·GENERAL PURPOSE AMPLIFIERS





Pinout

  Connection Diagram




Specifications

Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage (IE = 0)
-120
V
VCEO Collector-Emitter Voltage (IB = 0)
-120
V
VEBO Emitter-Base Voltage (IC = 0)
-4
V
IC Collector Current
-1
A
IB Base Current
-0.5
A
Ptot Total Dissipation at Tc 25
10
W
Ptot Total Dissipation at Tamb 50
1
W
Tstg Storage Temperature
-65 to 200
Tj Max. Operating Junction Temperature
200


  Connection Diagram




Description

The 2N5680 is high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier and switching circuit.

The 2N5680 complementary NPN type is the 2N5682.



The 2N5680 is designed as one kind of high voltage silicon epitaxial planar PNP transistor device that has two points of features:(1)SGS-thomson preferred salestype; (2)NPN transistor. And this device can be used in general purpose switching and general purpose amplifiers applications.

The absolute maximum ratings of the 2N5680 can be summarized as:(1)Collector-Base Voltage (IE = 0): -120 V;(2)Collector-Emitter Voltage (IB = 0): -120 V;(3)Emitter-Base Voltage (IC = 0): -4 V;(4)Collector Current: -1 A;(5)Base Current: -0.5 A;(6)Total Dissipation at Tc </= 25 : 10 W;(7)Total Dissipation at Tamb </= 50 : 1 W;(8)Storage Temperature: -65 to 200 ;(9)Max. Operating Junction Temperature: 200 ;(10)Thermal Resistance Junction-case: 17.5 /W;(11)Thermal Resistance Junction-ambient: 175 /W. If you want to know more information such as the electrical characteristics about the 2N5680, please download the datasheet in www.seekic.com or www.chinaicmart.com.






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