2N5679

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 4 V
Packaging : Box
Maximum DC Collector Current : 1 A
Maximum Operating Frequency : 30 MHz
Package / Case : TO-39
DC Collector/Base Gain hfe Min : 40 at 250 mA at 2 V


Features:

The 2N5679 and 2N5680 are silicon expitaxial planar PNP transistors in jedec TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier and switching circuit

The complementary NPN types are the 2N5681 and 2N5682 respectively

Specifications

		2N5679	2N5680
VCBO VCEO VEBO IC IB Ptot Tstg Tj	Collector Base Voltage Collector Emitter Voltage (IB = 0) Emitter Base Voltage (IC = 0) Continuous Collector Current Base Current Total Dissipation at Tcase 25°C Tamb 25°C Operating and Storage Temperature Range Junction temperature	-100V -100V	-120V -120V
		-4V -1A -0.5A 10W 1W 65 to +200°C 200°C