2N5663

The 2N5663 is designed as one kind of Silicon NPN transistor device that can be used in (1)general purpose; (2)power transistor; (3)NPN silicon transistor applications. And the features of this device are:(1)hermetically sealed TO-5 metal can; (2)also available in chip configuration; (3)chip geometry 1031; (4)reference document: MIL-PRF-19500/454.

The absolute maximum ratings of the 2N5663 can be summarized as:(1)Collector-Emitter Voltage: 300 V;(2)Collector-Base Voltage: 400 V;(3)Emitter-Base Voltage: 6 Volts;(4)Collector Current, Continuous: 2 A;(5)Power Dissipation, TA = 25°C: 1 W;(6)Power Dissipation, TC = 25°C: 15 W;(7)Operating Junction Temperature: -65 to +200 °C;(8)Storage Temperature: -65 to +200 °C.

The electrical characteristics of this device can be summarized as:(1)Collector-Emitter Breakdown Voltage: 300 Volts;(2)Collector-Emitter Breakdown Voltage: 400 Volts;(3)Emitter-Base Breakdown Voltage: 6 Volts;(4)Collector-Base Cutoff Current: 0.1 uA or 1.0 uA;(5)Collector-Emitter Cutoff Current: 0.2 uA or 100 uA;(6)Base-Emitter Saturation Voltage: 1.2 or 1.5 V;(7)Collector-Emitter Saturation Voltage: 0.4 or 0.8 V;(8)Open Circuit Output Capacitance: 45 pF. If you want to know more information such as the electrical characteristics about the 2N5663, please download the datasheet in www.seekic.com or www.chinaicmart.com.