Transistors Bipolar (BJT) 1A 250V 20W NPN
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 350 V |
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 0.5 A |
DC Collector/Base Gain hfe Min : | 30 | Configuration : | Single |
Maximum Operating Frequency : | 10 MHz (Min) | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-225 |
Packaging : | Bulk |
Technical/Catalog Information | 2N5657G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 350V |
Current - Collector (Ic) (Max) | 500mA |
Power - Max | 20W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 100mA, 10mV |
Vce Saturation (Max) @ Ib, Ic | 1V @ 10mA, 100mA |
Frequency - Transition | 10MHz |
Current - Collector Cutoff (Max) | 100A |
Mounting Type | Through Hole |
Package / Case | TO-225-3 |
Packaging | Bulk |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | 2N5657G 2N5657G 2N5657GOS ND 2N5657GOSND 2N5657GOS |