2N5657G, US $ .19-.33 , ON Semiconductor, 2N5657G DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00205532 Detail

2N5657G: Transistors Bipolar (BJT) 1A 250V 20W NPN

2N5657G Data Sheet

US $ .19~.33 / Piece | Get Latest Price

Part Number:: 2N5657G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	350 V
Emitter- Base Voltage VEBO :	6 V	Maximum DC Collector Current :	0.5 A
DC Collector/Base Gain hfe Min :	30	Configuration :	Single
Maximum Operating Frequency :	10 MHz (Min)	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-225
Packaging :	Bulk

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 30
Maximum Operating Frequency : 10 MHz (Min)
Packaging : Bulk
Collector- Emitter Voltage VCEO Max : 350 V
Package / Case : TO-225

Parameters:

Technical/Catalog Information	2N5657G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	350V
Current - Collector (Ic) (Max)	500mA
Power - Max	20W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 100mA, 10mV
Vce Saturation (Max) @ Ib, Ic	1V @ 10mA, 100mA
Frequency - Transition	10MHz
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	TO-225-3
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N5657G 2N5657G 2N5657GOS ND 2N5657GOSND 2N5657GOS

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2N5657G

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