Transistors Bipolar (BJT) 1A 250V 20W NPN
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 250 V |
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 0.5 A |
DC Collector/Base Gain hfe Min : | 25 | Configuration : | Single |
Maximum Operating Frequency : | 10 MHz (Min) | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-225 |
Packaging : | Bulk |
Rating | Symbol | 2N5655 | 2N5656 | 2N5657 | Unit |
CollectorEmitter Voltage | VCEO | 250 | 300 | 350 | Vdc |
CollectorBase Voltage | VCB | 275 | 325 | 375 | Vdc |
EmitterBase Voltage | VEB | 6.0 | 6.0 | 6.0 | Vdc |
Collector Current - Continuous Peak |
IC | 0.5 1.0 |
0.5 1.0 |
0.5 1.0 |
Adc |
Base Current | IB | 0.25 | 0.25 | 0.25 | Adc |
Total Device Dissipation @ TC = 25 Derate above 25 |
PD | 20 0.16 |
20 0.16 |
20 0.16 |
Watts W/ |
Operating and Storage Junction Temperature Range |
TJ, Tstg | 65 to +200 | 65 to +150 |
Technical/Catalog Information | 2N5655 |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 250V |
Current - Collector (Ic) (Max) | 500mA |
Power - Max | 20W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 100mA, 10mV |
Vce Saturation (Max) @ Ib, Ic | 1V @ 10mA, 100mA |
Frequency - Transition | 10MHz |
Current - Collector Cutoff (Max) | 100A |
Mounting Type | Through Hole |
Package / Case | TO-225-3 |
Packaging | Bulk |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | 2N5655 2N5655 2N5655OS ND 2N5655OSND 2N5655OS |