Position: Home  > All Categories> Integrated Circuits (ICs) > 2N5639

2N5639

JFET N-CHANNEL 30V 50mA

product image

2N5639 Picture
See larger image
SeekIC No. : 00144203 Detail

2N5639: JFET N-CHANNEL 30V 50mA

2N5639 Data Sheet

floor Price/Ceiling Price

US $ .2~.23 / Piece | Get Latest Price
Part Number:
2N5639
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.23
  • $.22
  • $.21
  • $.2
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/2/15

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain Current (Idss at Vgs=0) : 24 mA to 60 mA
Gate-Source Breakdown Voltage : - 30 V Configuration : Single
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Bulk    

Description

Drain Source Voltage VDS :
Continuous Drain Current :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Gate-Source Breakdown Voltage : - 30 V
Package / Case : TO-92
Packaging : Bulk
Drain Current (Idss at Vgs=0) : 24 mA to 60 mA


Specifications

Rating
Symbol
Value
Unit
DrainSource Voltage
VDS
30
Vdc
DrainGate Voltage
VDG
30
Vdc
Reverse GateSource Voltage
VGSR
30
Vdc
Forward Gate Current
IGF
10
mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
310
2.82
mW
mW/°C
Storage Temperature Range
Tstg
65 to +150
°C
Operating Junction Temp Range
TJ
65 to +135
°C



Parameters:

Technical/Catalog Information2N5639
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Drain (Idss) @ Vds (Vgs=0)25mA @ 20V
Gate to Source Voltage (Vgs Max)*
Input Capacitance (Ciss) @ Vds 10pF @ 12V (VGS)
Power - Max310mW
PackagingBulk
Package / CaseTO-92-3, TO-226AA (Straight Leads)
Voltage - Cutoff (VGS off) @ Id-
Voltage - Breakdown (V(BR)GSS)35V
Resistance - RDS(On)60 Ohm
Current Drain (Id) - Max-
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names 2N5639
2N5639
2N5639OS ND
2N5639OSND
2N5639OS



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
RF and RFID
X3C26P1-30S
1P620S
Discrete Semiconductor Products
T508N12TOF
MUR20040
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
View more