Application·For high voltage and high power amplifier applicationsSpecifications SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage 2N56292N5630 Open emitter 100120 V VCEO Collector-emitter voltage 2N56292N5630 Open base 100120 ...
2N5630: Application·For high voltage and high power amplifier applicationsSpecifications SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage 2N56292N5630 Open e...
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SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT | |
VCBO |
Collector-base voltage |
2N5629 2N5630 |
Open emitter |
100 120 |
V |
VCEO |
Collector-emitter voltage |
2N5629 2N5630 |
Open base |
100 120 |
V |
VEBO |
Emitter-base voltage |
Open collector |
7 |
V | |
IC |
Collector current |
16 |
A | ||
ICM |
Collector current-peak |
20 |
A | ||
IB |
Base current |
5.0 |
A | ||
PD |
Total power dissipation |
TC=25 |
200 |
W | |
Tj |
Junction temperature |
200 |
|||
Tstg |
Storage temperature |
-65~200 |