2N5629, US $ 2.6-3.14 , Central Semiconductor, 2N5629 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00209710 Detail

2N5629: Transistors Bipolar (BJT) NPN High Pwr

2N5629 Data Sheet

US $ 2.6~3.14 / Piece | Get Latest Price

Part Number:: 2N5629
Mfg:: Central Semiconductor
Supply Ability:: 5000

Price Break

Qty
0~180
180~260
260~500
500~1000

Unit Price
$3.14
$2.87
$2.69
$2.6

Processing time
15 Days
15 Days
15 Days
15 Days

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Upload time: 2024/11/21

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Recent History
What is this?

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Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	100 V
Emitter- Base Voltage VEBO :	7 V	Maximum DC Collector Current :	16 A
DC Collector/Base Gain hfe Min :	25	Maximum Operating Frequency :	1 MHz
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-3	Packaging :	Sleeve

Description

Configuration :
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Maximum Operating Frequency : 1 MHz
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 100 V
DC Collector/Base Gain hfe Min : 25
Emitter- Base Voltage VEBO : 7 V
Maximum DC Collector Current : 16 A
Package / Case : TO-3
Packaging : Sleeve

Application

·For high voltage and high power amplifier applications

Specifications

SYMBOL	PARAMETER		CONDITIONS	VALUE	UNIT
V_CBO	Collector-base voltage	2N5629 2N5630	Open emitter	100 120	V
V_CEO	Collector-emitter voltage	2N5629 2N5630	Open base	100 120	V
V_EBO	Emitter-base voltage		Open collector	7	V
I_C	Collector current			16	A
I_CM	Collector current-peak			20	A
I_B	Base current			5.0	A
P_D	Total power dissipation		T_C=25	200	W
T_j	Junction temperature			200
T_stg	Storage temperature			-65~200

Description

·With TO-3 package
·Complement to type 2N6029 2N6030

2N5629

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2N5629

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