2N5565

Drain Source Voltage VDS :
Continuous Drain Current :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : - 40 V
Mounting Style : Through Hole
Packaging : Bulk
Drain Current (Idss at Vgs=0) : 5 mA to 30 mA
Configuration : Dual
Package / Case : TO-71


Features:

` Two-Chip Design
` High Slew Rate
` Low Offset/Drift Voltage
` Low Gate Leakage: 3 pA
` Low Noise: 12 nV⁄Hz @ 10 Hz
` Good CMRR: 76 dB
` Minimum Parasitics


Application

· Wideband Differential Amps
· High-Speed, Temp-Compensated, Single-Ended Input Amps
· High-Speed Comparators
· Impedance Converters
· Matched Switches


Specifications

Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  40 V
Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±80 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50 mA
Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . 300
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to 200
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150
Power Dissipation : Per Side^a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . 325 mW
                                   Total^b . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 650 mW
Notes
a. Derate 2.6 mW/ above 25
b. Derate 5.2 mW/ above 25


Description

The 2N5564/5565/5566 are matched pairs of JFETs mounted in a TO-71 package. This two-chip design reduces parasitics for good performance at high frequency while ensuring extremely tight matching. This series features high breakdown voltage (V(BR)DSS typically > 55 V), high gain (typically > 9 mS), and <5 mV offset between the two die. The hermetically-sealed TO-71 package is available with full military processing (see Military Information).

For similar products see the low-noise U/SST401 series, and the low-leakage 2N5196/5197/5198/5199 data sheets.