2N5551RLRMG Selling Leads, Price trend , ON Semiconductor, 2N5551RLRMG DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00210927 Detail

2N5551RLRMG: Transistors Bipolar (BJT) 600mA 180V NPN

2N5551RLRMG Data Sheet

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Part Number:: 2N5551RLRMG
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	160 V
Emitter- Base Voltage VEBO :	6 V	Maximum DC Collector Current :	0.6 A
DC Collector/Base Gain hfe Min :	80 at 1 mA at 5 V	Configuration :	Single
Maximum Operating Frequency :	300 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-92
Packaging :	Ammo

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Package / Case : TO-92
Maximum Operating Frequency : 300 MHz
Packaging : Ammo
Collector- Emitter Voltage VCEO Max : 160 V
Maximum DC Collector Current : 0.6 A
DC Collector/Base Gain hfe Min : 80 at 1 mA at 5 V

Parameters:

Technical/Catalog Information	2N5551RLRMG
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	160V
Current - Collector (Ic) (Max)	600mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	200mV @ 5mA, 50mA
Frequency - Transition	300MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Formed Leads)
Packaging	Tape & Box (TB)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N5551RLRMG 2N5551RLRMG

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