2N5550TF

Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

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SeekIC No. : 00211785 Detail

2N5550TF: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

floor Price/Ceiling Price

Part Number:
2N5550TF
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 140 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 0.6 A
DC Collector/Base Gain hfe Min : 60 Configuration : Single
Maximum Operating Frequency : 100 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92-3 Kinked Lead
Packaging : Reel    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Maximum Operating Frequency : 100 MHz
Package / Case : TO-92-3 Kinked Lead
DC Collector/Base Gain hfe Min : 60
Maximum DC Collector Current : 0.6 A
Collector- Emitter Voltage VCEO Max : 140 V


Parameters:

Technical/Catalog Information2N5550TF
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)140V
Current - Collector (Ic) (Max)600mA
Power - Max625mW
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 1mA, 10mA
Frequency - Transition300MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2N5550TF
2N5550TF



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