2N5550G

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Package / Case : TO-92
Maximum Operating Frequency : 300 MHz
Packaging : Bulk
Maximum DC Collector Current : 0.6 A
Collector- Emitter Voltage VCEO Max : 140 V
DC Collector/Base Gain hfe Min : 60 at 1 mA at 5 V


Parameters:

Technical/Catalog Information	2N5550G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	140V
Current - Collector (Ic) (Max)	600mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 50mA
Frequency - Transition	300MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N5550G 2N5550G 2N5550GOS ND 2N5550GOSND 2N5550GOS