JFET P-Channel Transistor General Purpose
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Transistor Polarity : | P-Channel | Drain Current (Idss at Vgs=0) : | 6 mA to 15 mA |
Gate-Source Breakdown Voltage : | 40 V | Configuration : | Single |
Mounting Style : | Through Hole | Package / Case : | TO-92 |
Packaging : | Bulk |
Rating | Symbol | Value | Unit |
DrainGate Voltage | VDG | 40 | Vdc |
Reverse GateSource Voltage | VGSR | 40 | Vdc |
Forward Gate Current | IG(f) | 10 | mAdc |
Total Device Dissipation @ TA = 25°C Derate above 25°C |
PD | 350 2.8 |
mW mW/°C |
Junction Temperature Range | TJ | 65 to +135 | °C |
Storage Channel Temperature Range | Tstg | 65 to +150 | °C |
Technical/Catalog Information | 2N5461 |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | - |
Current - Drain (Idss) @ Vds (Vgs=0) | 2mA @ 15V |
Gate to Source Voltage (Vgs Max) | * |
Input Capacitance (Ciss) @ Vds | 7pF @ 15V |
Power - Max | 350mW |
Packaging | Bulk |
Package / Case | TO-92-3, TO-226AA (Straight Leads) |
Voltage - Cutoff (VGS off) @ Id | 1V @ 1A |
Voltage - Breakdown (V(BR)GSS) | 40V |
Resistance - RDS(On) | - |
Current Drain (Id) - Max | - |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | 2N5461 2N5461 2N5461OS ND 2N5461OSND 2N5461OS |