JFET P-Ch Junc FET
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Transistor Polarity : | P-Channel | Drain Source Voltage VDS : | - 40 V |
Drain Current (Idss at Vgs=0) : | 4 mA to 16 mA | Gate-Source Breakdown Voltage : | 40 V |
Continuous Drain Current : | 5 mA | Configuration : | Single |
Mounting Style : | Through Hole | Package / Case : | TO-92 |
Packaging : | Box |
Symbol |
Parameter |
Value |
Units |
VDG VGS IGF TJ ,Tstg |
Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range |
- 40 40 10 -55 to +150 |
V V mA |
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Technical/Catalog Information | 2N5460 |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | - |
Current - Drain (Idss) @ Vds (Vgs=0) | 1mA @ 15V |
Gate to Source Voltage (Vgs Max) | * |
Input Capacitance (Ciss) @ Vds | 7pF @ 15V |
Power - Max | 350mW |
Packaging | Bulk |
Package / Case | TO-92-3, TO-226AA (Straight Leads) |
Voltage - Cutoff (VGS off) @ Id | 750mV @ 1A |
Voltage - Breakdown (V(BR)GSS) | 40V |
Resistance - RDS(On) | - |
Current Drain (Id) - Max | - |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | 2N5460 2N5460 2N5460OS ND 2N5460OSND 2N5460OS |