2N5459

Drain Source Voltage VDS :
Continuous Drain Current :
Transistor Polarity : N-Channel
Configuration : Single
Gate-Source Breakdown Voltage : - 25 V
Mounting Style : Through Hole
Package / Case : TO-92
Packaging : Bulk
Drain Current (Idss at Vgs=0) : 60 mA to 140 mA


Features:

(TA = 25 unless otherwise noted)
Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Continuous Forward Gate Current . . . . . . . . . . . . . . . . 10mA
Storage Temperature Range . . . . . . . . . . . . . -65 to +150
Operating Temperature Range . . . . . . . . . . . -55 to +135
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mW
Derate above 25 . . . . . . . . . . . . . . . . . . . . . . . . . 2.82mW/

NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Parameters:

Technical/Catalog Information	2N5459
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	-
Current - Drain (Idss) @ Vds (Vgs=0)	4mA @ 15V
Gate to Source Voltage (Vgs Max)	*
Input Capacitance (Ciss) @ Vds	7pF @ 15V
Power - Max	625mW
Packaging	Bulk
Package / Case	TO-92
Voltage - Cutoff (VGS off) @ Id	2V @ 10nA
Voltage - Breakdown (V(BR)GSS)	25V
Resistance - RDS(On)	-
Current Drain (Id) - Max	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N5459 2N5459