2N5434

Drain Source Voltage VDS :
Continuous Drain Current :
Transistor Polarity : N-Channel
Configuration : Single
Gate-Source Breakdown Voltage : - 25 V
Packaging : Bulk
Drain Current (Idss at Vgs=0) : 30 mA
Mounting Style : Stud
Package / Case : TO-52


Features:

· Low rds(on)
· Excellent Switching
· Low Cutoff Current




Specifications

(T_A = 25 unless otherwise noted)
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Storage Temperature Range . . . . . . . . . . . . . -65 to +200
Operating Temperature Range . . . . . . . . . . . -55 to +150
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25 . . . . . . . . . . . . . . . . . . . . . . . 2.3mW/

NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.