2N5416

Transistors Bipolar (BJT) PNP Power Switching

product image

2N5416 Picture
SeekIC No. : 00205610 Detail

2N5416: Transistors Bipolar (BJT) PNP Power Switching

floor Price/Ceiling Price

US $ .46~.78 / Piece | Get Latest Price
Part Number:
2N5416
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.78
  • $.63
  • $.53
  • $.46
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/20

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 300 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 30 Configuration : Single
Maximum Operating Frequency : 15 MHz (Min) Maximum Operating Temperature : + 200 C
Mounting Style : Through Hole Package / Case : TO-39
Packaging : Bulk    

Description

Configuration : Single
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 200 C
Collector- Emitter Voltage VCEO Max : 300 V
Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 30
Packaging : Bulk
Maximum Operating Frequency : 15 MHz (Min)
Package / Case : TO-39


Specifications

Ratings Symbol 2N5302 2N5303 Unit
Collector-Emitter Voltage VCEO 200 300 Vdc
Collector-Base Voltage VCEO 200 350 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current IC 1.0 Adc
Total Power Dissipation @ TA = +25
@ TC = +25
PT 0.75
10
W
W
Operating & Storage Junction Temperature Range Top, Tstg -65 to +200



Parameters:

Technical/Catalog Information2N5416
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)300V
Current - Collector (Ic) (Max)1A
Power - Max10W
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 10V
Vce Saturation (Max) @ Ib, Ic2.5V @ 5mA, 50mA
Frequency - Transition15MHz
Current - Collector Cutoff (Max)50A
Mounting TypeThrough Hole
Package / CaseTO-39-3, Metal Can
PackagingTube
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2N5416
2N5416
497 2596 5 ND
49725965ND
497-2596-5



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Crystals and Oscillators
Cables, Wires
Resistors
Audio Products
Computers, Office - Components, Accessories
Prototyping Products
DE1
View more