2N5401TAR Selling Leads, Price trend , Fairchild Semiconductor, 2N5401TAR DataSheet download, circuit diagram from SeekIC.com

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2N5401TAR: Transistors Bipolar (BJT) PNP Transistor General Purpose

2N5401TAR Data Sheet

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Part Number:: 2N5401TAR
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/21

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Transistors Bipolar (BJT) PNP Transistor General Purpose
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Transistors Bipolar (BJT) PNP Transistor General Purpose

Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	150 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	0.6 A
DC Collector/Base Gain hfe Min :	60	Configuration :	Single
Maximum Operating Frequency :	400 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-92
Packaging :	Ammo

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Packaging : Ammo
DC Collector/Base Gain hfe Min : 60
Maximum DC Collector Current : 0.6 A
Collector- Emitter Voltage VCEO Max : 150 V
Maximum Operating Frequency : 400 MHz

Parameters:

Technical/Catalog Information	2N5401TAR
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	150V
Current - Collector (Ic) (Max)	600mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	200mV @ 1mA, 10mA
Frequency - Transition	400MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Tape & Box (TB)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N5401TAR 2N5401TAR

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2N5401TAR

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