Transistors Bipolar (BJT) 500mA 160V PNP
2N5401RLRM: Transistors Bipolar (BJT) 500mA 160V PNP
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 150 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 0.6 A |
DC Collector/Base Gain hfe Min : | 50 at 1 mA at 5 V | Configuration : | Single |
Maximum Operating Frequency : | 300 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-92 |
Packaging : | Ammo |
Technical/Catalog Information | 2N5401RLRM |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 150V |
Current - Collector (Ic) (Max) | 600mA |
Power - Max | 625mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 1mA, 10mA |
Frequency - Transition | 300MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-92-3, TO-226AA (Formed Leads) |
Packaging | Tape & Box (TB) |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | 2N5401RLRM 2N5401RLRM |