2N5401RLRA

Configuration : Single
Maximum Operating Temperature : + 150 C
Packaging : Reel
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum Operating Frequency : 300 MHz
Maximum DC Collector Current : 0.6 A
Collector- Emitter Voltage VCEO Max : 150 V
DC Collector/Base Gain hfe Min : 50 at 1 mA at 5 V


Features:

• Pb−Free Packages are Available*


Specifications

Rating	Symbol	2N5400	2N5401	Unit
Collector − Emitter Voltage	VCEO	120	150	Vdc
Collector − Base Voltage	VCBO	130	160	Vdc
Emitter − Base Voltage	VEBO	5.0		Vdc
Collector Current − Continuous	IC	600		mAdc
Total Device Dissipation @ TA = 25°C Derate above 25°C	PD	625 5.0		mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C	PD	1.5 12		Watts mW/°C
Operating and Storage Junction Temperature Range	TJ, Tstg	−55 to +150		°C

Parameters:

Technical/Catalog Information	2N5401RLRA
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	150V
Current - Collector (Ic) (Max)	600mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	200mV @ 1mA, 10mA
Frequency - Transition	300MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Formed Leads)
Packaging	Tape & Reel (TR)
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N5401RLRA 2N5401RLRA 2N5401RLRAOSTR ND 2N5401RLRAOSTRND 2N5401RLRAOSTR