2N5368

2N5368 is a kind of silicon planar epitaxial transistors for general purpose amplifiers and switches.
There are some absolute maximum ratings about 2N5368 when Ta is 25 unless otherwise noted. Collector-base voltage(V_CBO) is 60 V. Collector-emitter voltage(V_CEO) is 30 V. Emitter-base voltage(V_EBO) is 5 V. Collector current(Ic) is 500 mA. Total power dissipation(Ptot) is 500 mW when Ta is less than 25. Collector current(Ic) is 500 mA. Junction temperature(Tj) is -55 to 150. Storage temperature(Tstg) is -55 to 150. Besides, there are also some electrical characteristics about it when Ta is 25 unless otherwise noted. Collector-base breakdown voltage(BV_CBO) is 60 V min when Ic is 0.01 mA abd IE is 0. Collector-emitter breakdown voltage(BV_CEO) is 30 V min when Ic is 10 mA and IB is 0. Emitter-base breakdown voltage(BV_EBO) is 5 V min when IE is 0.01 mA and Ic is 0. Collector cut-off current (I_CBO) is 50 nA max when V_CB is 40 V and IE is 0. Emitter cut-off current (I_EBO) is 50 nA max when VEB is 3 V and Ic is 0 . Collector-emitter saturation voltage(V_CE(sat) ) is 0.18 V typ and 0.3 V max when Ic is 10 mA and IB is 1 mA, or is 0.25 V max when Ic is 50 mA and IB is 5 mA. Base-emitter saturation voltage(V_BE(sat) ) is 1 V max when Ic is 10 mA and I_B is 15 and Ic is 150 mA. Base-emitter saturation voltage(V_BE(sat) ) is 0.84 V typ and 1.3 V max when Ic is 150 mA and I_B is 15 mA.Base-emitter voltage(V_BE) is 0.8 V typ and 1.2 V max when Ic is 150 mA and V_CE is 10 V.
Current gain bandwidth product(f_T) is 250 MHz min and 370 MHz max when Ic is 20 mA , V_CE is 10 V . Output capacitance (Cob) is 8 pF max when VCB is 10 V, IE is 0 , f is 100MHz. Noise figure(NF) is 10 dB max when Ic is 250A , V_CE is 5 V, and f is 1 MHz.
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