Specifications TCASE = 25°c unless otherwise stated 2N5322 2N5323 VCBOVCEVVCEOVEBOICIBPtotTstg,Tj Collector Base Voltage (IE = 0)Collector Emitter Voltage (VBE = 1.5v)Emitter Base Voltage (IB = 0)Emitter Base Voltage (IC = 0)Continuous Collector CurrentBase CurrentTotal Dissipat...
2N5323: Specifications TCASE = 25°c unless otherwise stated 2N5322 2N5323 VCBOVCEVVCEOVEBOICIBPtotTstg,Tj Collector Base Voltage (IE = 0)Collector Emitter Voltage (VBE = 1.5v)Emitter Base ...
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TCASE = 25°c unless otherwise stated |
2N5322 |
2N5323 | |
VCBO VCEV VCEO VEBO IC IB Ptot Tstg,Tj |
Collector Base Voltage (IE = 0) Collector Emitter Voltage (VBE = 1.5v) Emitter Base Voltage (IB = 0) Emitter Base Voltage (IC = 0) Continuous Collector Current Base Current Total Dissipation at Tamb = 25°C Tcase = 50°C Storage and Junction temperature |
-100V -100V -75V -6V |
-75V -75V -50V -5V |
-2A -1A 1W 10W 65 to +200°C |
The 2N5322 and 2n5323 are silicon planar expitaxial PNP transistors in jedec TO-39 metal case intended for high voltage medium power applications in industrial and commercial equipment.
The complementary NPN types are the 2N5320 and 2N5321 respectively