ApplicationMedium power, low frequency PNP bipolar transistor in a hermetically sealed TO66 metal package.Specifications(Tcase = 25°C unless otherwise stated) 2N4898X 2N4899X 2N4900X V(BR)CBO Collector Base Breakdown Voltage 40V 60V 80V V(BR)CBO Collector Emitter ...
2N4900X: ApplicationMedium power, low frequency PNP bipolar transistor in a hermetically sealed TO66 metal package.Specifications(Tcase = 25°C unless otherwise stated) 2N4898X 2N4899X 2N...
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2N4898X |
2N4899X |
2N4900X | ||
V(BR)CBO | Collector Base Breakdown Voltage | 40V | 60V | 80V |
V(BR)CBO | Collector Emitter Breakdown Voltage | 40V | 60V | 80V |
V(BR)CBO | Emitter Base Breakdown Voltage |
5V | ||
IC | Continuous Collector Current |
4A | ||
IB | Base Current |
1A | ||
PD | Total Power Dissipation |
25W | ||
TC | Operating Case Temperature Range |
65 to +200°C | ||
Tstg | Storage Temperature Range |
65 to +200°C | ||
RJC | Thermal Resistance , Junction To Case |
7.0°C/W |