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2N4410_D26Z: Transistors Bipolar (BJT) NPN Transistor General Purpose

2N4410_D26Z Data Sheet

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Part Number:: 2N4410_D26Z
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/21

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Transistors Bipolar (BJT) NPN Transistor General Purpose

Product Details

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Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	80 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	0.2 A
DC Collector/Base Gain hfe Min :	60	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-92-3 Kinked Lead	Packaging :	Reel

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Packaging : Reel
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92-3 Kinked Lead
Collector- Emitter Voltage VCEO Max : 80 V
Maximum DC Collector Current : 0.2 A
DC Collector/Base Gain hfe Min : 60

Parameters:

Technical/Catalog Information	2N4410_D26Z
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	200mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic	800mV @ 100A, 1mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Tape & Reel (TR)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N4410_D26Z 2N4410_D26Z

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2N4410_D26Z

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