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SeekIC No. : 00210618 Detail

2N4403RLRMG: Transistors Bipolar (BJT) 600mA 40V PNP

2N4403RLRMG Data Sheet

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Part Number:: 2N4403RLRMG
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/21

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Transistors Bipolar (BJT) NPN Transistor General Purpose

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Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	40 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	0.6 A
DC Collector/Base Gain hfe Min :	30 at 0.1 mA at 1 V	Configuration :	Single
Maximum Operating Frequency :	200 MHz (Min)	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-92
Packaging :	Ammo

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Packaging : Ammo
Collector- Emitter Voltage VCEO Max : 40 V
Maximum DC Collector Current : 0.6 A
Maximum Operating Frequency : 200 MHz (Min)
DC Collector/Base Gain hfe Min : 30 at 0.1 mA at 1 V

Parameters:

Technical/Catalog Information	2N4403RLRMG
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	600mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 2V
Vce Saturation (Max) @ Ib, Ic	400mV @ 15mA, 150mA
Frequency - Transition	200MHz
Current - Collector Cutoff (Max)	100nA
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Formed Leads)
Packaging	Tape & Box (TB)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N4403RLRMG 2N4403RLRMG

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