Transistors Bipolar (BJT) PNP Power SW
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 40 V | ||
Maximum DC Collector Current : | 30 A | DC Collector/Base Gain hfe Min : | 15 | ||
Maximum Operating Frequency : | 4 MHz | Mounting Style : | Through Hole | ||
Package / Case : | TO-3 | Packaging : | Sleeve |
SYMBOL | PARAMETER | CONDITIONS | RATING | UNIT |
VCBO | Collector to base voltage 2N4398 2N4399 2N5745 |
Open emitter |
-40 |
V |
VCEO | Collector to emitter voltage 2N4398 2N4399 2N5745 |
Open base | -40 -60 -80 |
V |
VEBO | Emitter to base voltage | Open collector | -5 | V |
IC | Collector current 2N4398 2N4399 2N5745 |
-30 -20 |
A | |
IB | Base current | 7.5 | A | |
PD | Total Power Dissipation | TC=25 | 200 | W |
Tj | Junction temperature | 200 | ||
Tstg | Storage temperaturerange | -65 ~+200 |
2N4398 specifications:
·With TO-3 package
·Complement to type 2N5301/5302/5303
·Low collector saturation voltage
·Excellent safe operating area