2N4339

Drain Source Voltage VDS :
Continuous Drain Current :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Bulk
Package / Case : TO-206AA
Gate-Source Breakdown Voltage : - 50 V
Drain Current (Idss at Vgs=0) : 1.5 uA


Features:

· Exceptionally High Figure of Merit
· Radiation Immunity
· Extremely Low Noise and Capacitance
· High Input Impedance




Application

· Low-level Choppers
· Data Switches
· Multiplexers and Low Noise Amplifiers




Specifications

(TA = 25 unless otherwise noted)
Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -50V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -65to +200
Operating Temperature Range . . . . . . . . . . . -55 to +175
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25 . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/

NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.