2N4261UB

Features: • Hermetically sealed Cersot ceramic• Also available in chip configuration• Chip geometry 0014• Reference document: MIL-PRF-19500/511Application• General purpose switching transistor• Low power• PNP silicon transistorSpecifications PARAMETER...

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SeekIC No. : 004219013 Detail

2N4261UB: Features: • Hermetically sealed Cersot ceramic• Also available in chip configuration• Chip geometry 0014• Reference document: MIL-PRF-19500/511Application• General purp...

floor Price/Ceiling Price

Part Number:
2N4261UB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

• Hermetically sealed Cersot ceramic
• Also available in chip configuration
• Chip geometry 0014
• Reference document: MIL-PRF-19500/511



Application

• General purpose switching transistor
• Low power
• PNP silicon transistor



Specifications

PARAMETER
SYMBOL
Rating
UNIT
Collector-Emitter Voltage
VCEO
15
Volts
Collector-Base Voltagee
VCBO
15
Volts
Emitter-Base Voltage
VEBO
4.5
Volts
Peak Collector Current
IC
30
mA
Power Dissipation, TA = 25
Derate linearly above 25
PT
200
1.14
mW
mW/
Thermal Resistance
RJA
0.86
/mW
Operating Junction Temperature
Storage Temperature
TJ
TSTG
-65 to +200



Description

SEMICOA offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N4261UBJ)
• JANTX level (2N4261UBJX)
• JANTXV level (2N4261UBJV)
• JANS level (2N4261UBJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS
• Radiation testing (total dose) upon request


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