2N4123RLRM

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum Operating Frequency : 250 MHz
Packaging : Ammo
Maximum DC Collector Current : 0.2 A
Collector- Emitter Voltage VCEO Max : 30 V
DC Collector/Base Gain hfe Min : 50 at 2 mA at 1 V


Parameters:

Technical/Catalog Information	2N4123RLRM
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	200mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 2mA, 1V
Vce Saturation (Max) @ Ib, Ic	300mV @ 5mA, 50mA
Frequency - Transition	250MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Formed Leads)
Packaging	Tape & Box (TB)
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N4123RLRM 2N4123RLRM