Maximum DC Collector Current
:
Maximum Operating Temperature
:
Configuration
: Single
Transistor Polarity
: PNP
Mounting Style
: Through Hole
Emitter- Base Voltage VEBO
: 5 V
Collector- Emitter Voltage VCEO Max
: 80 V
Packaging
: Bulk
Maximum Operating Frequency
: 150 MHz
Package / Case
: TO-39
DC Collector/Base Gain hfe Min
: 100 at 100 mA at 1 V
Pinout
Specifications
| VCEO |
Collector Emitter Voltage |
-80V |
| VCBO |
Collector Base Voltage |
-80V |
| VEBO |
Emitter Base Voltage |
-5V |
| IC |
Continuous Collector Current |
-1A |
| PD |
Total Device Dissipation atTA=25°C |
0.8W |
|
Derate above 25°C |
4.56 mW/°C |
| PD |
Total Device Dissipation atTC=25°C |
4W |
|
Derate above 25°C |
22.8mW/°C |
| Tstg |
Operating and Storage Temperature Range |
65 to +200°C |
DescriptionThe 2N4033 is designed as one kind of Silicon NPN transistor device that can be used in (1)general purpose; (2)power transistor; (3)NPN silicon transistor applications. And the features of this device are:(1)hermetically sealed TO-5 metal can; (2)also available in chip configuration; (3)chip geometry 1031; (4)reference document: MIL-PRF-19500/454.
The absolute maximum ratings of the 2N4033 can be summarized as:(1)Collector-Emitter Voltage: 300 V;(2)Collector-Base Voltage: 400 V;(3)Emitter-Base Voltage: 6 Volts;(4)Collector Current, Continuous: 2 A;(5)Power Dissipation, TA = 25°C: 1 W;(6)Power Dissipation, TC = 25°C: 15 W;(7)Operating Junction Temperature: -65 to +200 °C;(8)Storage Temperature: -65 to +200 °C.
The electrical characteristics of 2N4033 can be summarized as:(1)Collector-Emitter Breakdown Voltage: 300 Volts;(2)Collector-Emitter Breakdown Voltage: 400 Volts;(3)Emitter-Base Breakdown Voltage: 6 Volts;(4)Collector-Base Cutoff Current: 0.1 uA or 1.0 uA;(5)Collector-Emitter Cutoff Current: 0.2 uA or 100 uA;(6)Base-Emitter Saturation Voltage: 1.2 or 1.5 V;(7)Collector-Emitter Saturation Voltage: 0.4 or 0.8 V;(8)Open Circuit Output Capacitance: 45 pF. If you want to know more information such as the electrical characteristics about the 2N4033, please download the datasheet in www.seekic.com or www.chinaicmart.com.
Parameters: | Technical/Catalog Information | 2N4033 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Current - Collector (Ic) (Max) | 1A |
| Power - Max | 800mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Frequency - Transition | 500MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Through Hole |
| Package / Case | TO-39-3, Metal Can |
| Packaging | Tube |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2N4033
2N4033
497 2582 5 ND
49725825ND
497-2582-5
|
2N4033 Data Sheet
