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2N3998

Features: • Hermetically sealed TO-x metal can• Also available in chip configuration• Chip geometry 9201• Reference document:Application• High-speed power switching• Power transistor• NPN silicon transistorSpecifications Parameter Symbol Ratin...

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SeekIC No. : 004218974 Detail

2N3998: Features: • Hermetically sealed TO-x metal can• Also available in chip configuration• Chip geometry 9201• Reference document:Application• High-speed power switchingR...

2N3998 Data Sheet

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Part Number:
2N3998
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/2/15

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Product Details

Description



Features:

• Hermetically sealed TO-x metal can
• Also available in chip configuration
• Chip geometry 9201
• Reference document:



Application

• High-speed power switching
• Power transistor
• NPN silicon transistor


Specifications

Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
80
Volts
Collector-Base Voltage
VCBO
100
Volts
Emitter-Base Voltage
VEBO
8
Volts
Collector Current, Continuous
IC
5
A
Power Dissipation, TC = 25
Derate linearly above 25
PT
2
11.4
W
mW/
Power Dissipation, TC = 25
Derate linearly above 25
PT
30
300
W
mW/
Thermal Resistance
RJC
3.33
/W
Operating Junction Temperature
TJ
-65 to +200
Storage Temperature
Tstg
-65 to +200



Description

Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3998J)
• JANTX level (2N3998JX)
• JANTXV level (2N3998JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV
• Radiation testing (total dose) upon request


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