Transistors Bipolar (BJT) PNP Gen Pur SS
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 40 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 0.2 A |
DC Collector/Base Gain hfe Min : | 30 at 0.1 mA at 1 V | Configuration : | Single |
Maximum Operating Frequency : | 200 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-92 |
Packaging : | Box |
2N3905, 2N3906 | ||
Collector-Emitter-voltage B open | - VCE0 | 40 V |
Collector-Base-voltage E open | - VCE0 | 40 V |
Emitter-Base-voltage C open | - VEB0 | 5 V |
Power dissipation Verlustleistung | Ptot | 625 mW 1) |
Collector current Kollektorstrom (dc) | - IC | 100 mA |
Peak collector current Kollektorspitzenstrom | - ICM | 200 mA |
Junction temp. Sperrschichttemperatur | Tj | 150°C |
Storage temperature Lagerungstemperatur | TS | - 55.+ 150°C |