2N3858(A)

The 2N3858(A) is a silicon transistors.It is planar epitaxial passivated NPN silicon transistors designed primarily for AM radio I.F. and converter applications.These types are supplied in JEDEC TO-98 package.

The absolute maximum ratings of the 2N3858(A) can be summarized as:(1)collector toemitter voltage(Vceo):30V; (2)emitter to base voltage(Vebo):4V; (3)collector to base voltage(Vcbo):30V; (4)continuous collector current:100mA; (5)total power dissipation(Ta 25):360mW; (6)operating temperature:-55~125; (7)storage temperature:-55~150; (8)lead temperature:260.

If you want to know more information such as the electrical characteristics about the 2N3858(A), please download the datasheet in www.seekic.com or www.chinaicmart.com.