Configuration
: Single
Maximum Operating Temperature
: + 150 C
Transistor Polarity
: PNP
Mounting Style
: Through Hole
Emitter- Base Voltage VEBO
: 5 V
Maximum Operating Frequency
: 200 MHz
Maximum DC Collector Current
: 1 A
Packaging
: Bulk
DC Collector/Base Gain hfe Min
: 50
Collector- Emitter Voltage VCEO Max
: 140 V
Package / Case
: TO-39
Features:
|
Ratings |
Symbol |
2N3634*
2N3635* |
2N3636*
2N3637* |
Unit |
|
Collector-Emitter Voltage |
VCEO |
140 |
175 |
Vdc |
| Collector-Base Voltage |
VCBO |
140 |
175 |
Vdc |
| Emitter-Base Voltage |
VEBO |
5.0 |
Vdc |
| Collector Current |
IC |
1.0 |
Adc |
|
Total Power Dissipation @ TA = +250C(1)
@ TC = +250C(2) |
PT |
1.0
5.0 |
W
W |
| Operating & Storage Junction Temperature Range |
Tj, Tstg |
-65 to +200 |
0C |
*Electrical characteristics for "L" suffix devices are identical to the "non L" corresponding devices
1) Derate linearly 5.71 mW/0C for TA > +250C
2) Derate linearly 28.6 mW/0C for TC > +250C
Specifications
|
Ratings |
Symbol |
2N3634*
2N3635* |
2N3636*
2N3637* |
Unit |
|
Collector-Emitter Voltage |
VCEO |
140 |
175 |
Vdc |
| Collector-Base Voltage |
VCBO |
140 |
175 |
Vdc |
| Emitter-Base Voltage |
VEBO |
5.0 |
Vdc |
| Collector Current |
IC |
1.0 |
Adc |
|
Total Power Dissipation @ TA = +250C(1)
@ TC = +250C(2) |
PT |
1.0
5.0 |
W
W |
| Operating & Storage Junction Temperature Range |
Tj, Tstg |
-65 to +200 |
0C |
*Electrical characteristics for "L" suffix devices are identical to the "non L" corresponding devices
1) Derate linearly 5.71 mW/0C for TA > +250C
2) Derate linearly 28.6 mW/0C for TC > +250C
2N3635 Data Sheet
