2N3440

Transistor Polarity : NPN
Configuration : Single
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 7 V
Maximum Operating Temperature : + 200 C
Maximum DC Collector Current : 1 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Collector- Emitter Voltage VCEO Max : 250 V
Maximum Operating Frequency : 15 MHz (Min)
Package / Case : TO-39


Features:

STMicroelectronics PREFERRED SALESTYPES
NPN TRANSISTOR




Specifications

Symbol	Parameter	Value		Unit
		2N3439	2N3440
VCBO	Collector-Base Voltage (IE = 0)	450	300	V
VCEO	Collector-Emitter Voltage (IB = 0)	350	250	V
VEBO	Emitter-Base Voltage (IC = 0)	7		V
IC	Collector Current	1		A
IB	Base Current	0.5		A
Ptot	Total Dissipation at Tc 25	10		W
Ptot	Total Dissipation at Tamb 50	1		W
Tstg	Storage Temperature	-65 to 200
Tj	Max. Operating Junction Temperature	200

Description

The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industria line-operated applications.

The 2N3440 is particularly suited as drivers in high-voltage low current inverters, switching and series regulators.

The 2N3440 is silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. The devices is particularly suited as drivers in high-voltage low current inverters, switching and series regulators.

The absolute maximum ratings of 2N3440 are:(1)Collector-Base Voltage(IE = 0):300 V; (2)Collector-Emitter Voltage (IB = 0):250 V; (3)Emitter-Base Voltage (IC = 0):7 V; (4)Collector Current:1 A; (5)Base Current:0.5 A; (6)Total Dissipation at Tc 25°C:10W; (7)Total Dissipation at Tamb 50°C:1W; (8)Storage Temperature:-65°C to 200°C ; (9)Max. Operating Junction Temperature:200°C.

The electrical characteristics of 2N3440 can be summarized as (1)Collector Cut-off Current (IE = 0) VCB = 250V:20A; (2)Collector Cut-off Current (IB = 0)VCE = 200 V:50A; (3)Collector Cut-off Current (VBE = -1.5V)VCE = 300 V:500A; (4)Emitter Cut-off Current(IC = 0),VEB = 6 V:20 A; (5)Collector-Emitter Sustaining Voltage,IC = 50 mA:250V; (6)Collector-Emitter Saturation Voltage,IC = 50 mA,IB = 4 mA:0.5 V; (7)Base-Emitter Saturation Voltage,IC = 50 mA,IB = 4 mA:1.3 V; (8)DC Current Gain,IC = 20 mA,VCE = 10V:40 to 160; (9)Small Signal Current Gain,IC = 5 mA,VCE = 10 V,f = 1KHz:25; (10)Transition frequency,IC = 5 mA,VCE = 10 V,f = 5MHz:15MHz.

If you want to know more information such as the electrical characteristics about the 2N3440, please download the datasheet in www.seekic.com or www.chinaicmart.com .

Parameters:

Technical/Catalog Information	2N3440
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	250V
Current - Collector (Ic) (Max)	1A
Power - Max	10W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 20mA, 10V
Vce Saturation (Max) @ Ib, Ic	500mV @ 4mA, 50mA
Frequency - Transition	15MHz
Current - Collector Cutoff (Max)	50A
Mounting Type	Through Hole
Package / Case	TO-39-3, Metal Can
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N3440 2N3440 497 2626 5 ND 49726265ND 497-2626-5