2N3419A

The 2N3419A is designed as one kind of 3 Amp, 125V, NPN silicon power transistor that can be used in (1)power supply; (2)pulse amplifier; (3)high frequency power switching. Also it is intended for use in commercial, industrial, and military power switching, amplifier, and regulator applications. This device is produced by PPC's DOUBLE DIFFUSED PLANAR process, and this process produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas.

Features of the 2N3419A are:(1)meets MIL-S-19500/393; (2)collector-base voltage: up to 125; (3)peak collector current: 5A; (4)high power dissipation in TO-5: 15W @ TC = 100°C; (5)fast switching. The absolute maximum ratings of the 2N3419A can be summarized as:(1)Collector-Base Voltage: 125 Volts;(2)Collector-Emitter Voltage: 80 Volts;(3)Emitter-Base Voltage: 8 Volts;(4)D.C. Collector Current: 3 Amps;(5)Peak Collector Current: 5 Amps;(6)Storage Temperature: -65 to 200 °C;(7)Operating Junction Temperature: -65 to 200 °C;(8)Power Dissipation TC = 25°C Ambient: 1.0 Watts;(9)Power Dissipation TC = 100°C Case: 15 Watts.

The electrical characteristics of the 2N3419A can be summarized as:(1)Collector-Emitter Breakdown Voltage: 80 Vdc;(2)Collector-Emitter: 0.3 uAdc;(3)Cutoff Current: 50 uAdc;(4)Collector-Emitter Cutoff Current: 5.0 uAdc;(5)Turn-off Time: 1.2 us;(6)Turn-on Time: 0.3 us;(7)Output Capacitance: 150 pf;(8)Gain Bandwidth Product: 26 to 160 MHz. If you want to know more information such as the electrical characteristics about 2N3419A, please download the datasheet in www.seekic.com or www.chinaicmart.com.