2N3417

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 50 V
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum DC Collector Current : 0.5 A
Packaging : Box
DC Collector/Base Gain hfe Min : 180 at 2 mA at 4.5 V


Specifications

Symbol	Parameter	Value	Units
VCEO	Collector-Emitter Voltage	50	V
VCBO	Collector-Base Voltage	50	V
VEBO	Emitter-Base Voltage	5.0	V
IC	Collector Current - Continuous	500	mA
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.




Description

The 2N3417 is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.

Parameters:

Technical/Catalog Information	2N3417
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	500mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	180 @ 2mA, 4.5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 3mA, 50mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N3417 2N3417