2N3390A

The 2N3390A is designed as one kind of silicon transistor that can be used in gernal purpose and high gain mplifier or driver applications. This device is also supplied in JEDEC TO-98 package that is supplied with and without seating flange.

The absolute maximum ratings of the 2N3390A can be summarized as:(1)collector to emitter voltage: 25 V;(2)emitter to base voltage: 5 V;(3)collector to base voltage: 25 V;(4)continuous collector current: 100 mA;(5)total power dissipation (TA </ =25): 350 mW;(6)total power dissipation (Tc </ =25): 1 W;(7)derate factor (TA > 25): 2.8 mW/;(8)derate factor (Tc > 25): 8 mW/;(9)operating temperature: -55 to +150 ;(10)storage temperature: -55 to +150 ;(11)lead temperature: +260 .

The electrical characteristics of 2N3390A can be summarized as:(1)collector-emitter breakdown voltage: 25 V;(2)collector-base breakdown voltage: 25 V;(3)collector cutoff current: 0.1 uA;(4)emitter cutoff current: 0.1 uA;(5)output capacitance: 2 to 10 pF;(6)noise figure: 1.9 to 5 dB. If you want to know more information such as the electrical characteristics about 2N3390A, please download the datasheet in www.seekic.com or www.chinaicmart.com.