2N3055HG

Transistors Bipolar (BJT) 15A 60V 115W NPN

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SeekIC No. : 00211107 Detail

2N3055HG: Transistors Bipolar (BJT) 15A 60V 115W NPN

floor Price/Ceiling Price

Part Number:
2N3055HG
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 15 A
DC Collector/Base Gain hfe Min : 20 Configuration : Single
Maximum Operating Frequency : 2.5 MHz (Min) Maximum Operating Temperature : + 200 C
Mounting Style : Through Hole Package / Case : TO-204
Packaging : Tray    

Description

Transistor Polarity : NPN
Configuration : Single
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 7 V
Maximum DC Collector Current : 15 A
DC Collector/Base Gain hfe Min : 20
Maximum Operating Frequency : 2.5 MHz (Min)
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray


Parameters:

Technical/Catalog Information2N3055HG
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)15A
Power - Max115W
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A, 4V
Vce Saturation (Max) @ Ib, Ic1.1V @ 400mA, 4A
Frequency - Transition-
Current - Collector Cutoff (Max)700A
Mounting TypeChassis Mount
Package / CaseTO-204, TO-3
PackagingTray
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2N3055HG
2N3055HG



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