Transistors Bipolar (BJT) 15A 60V 115W NPN
2N3055HG: Transistors Bipolar (BJT) 15A 60V 115W NPN
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 60 V |
Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 15 A |
DC Collector/Base Gain hfe Min : | 20 | Configuration : | Single |
Maximum Operating Frequency : | 2.5 MHz (Min) | Maximum Operating Temperature : | + 200 C |
Mounting Style : | Through Hole | Package / Case : | TO-204 |
Packaging : | Tray |
Technical/Catalog Information | 2N3055HG |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Current - Collector (Ic) (Max) | 15A |
Power - Max | 115W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A, 4V |
Vce Saturation (Max) @ Ib, Ic | 1.1V @ 400mA, 4A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 700A |
Mounting Type | Chassis Mount |
Package / Case | TO-204, TO-3 |
Packaging | Tray |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | 2N3055HG 2N3055HG |