2N3055A

Transistors Bipolar (BJT) 15A 60V 115W NPN

product image

2N3055A Picture
SeekIC No. : 00213853 Detail

2N3055A: Transistors Bipolar (BJT) 15A 60V 115W NPN

floor Price/Ceiling Price

Part Number:
2N3055A
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/4

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 15 A
DC Collector/Base Gain hfe Min : 10 Configuration : Single
Maximum Operating Frequency : 6 MHz Maximum Operating Temperature : + 200 C
Mounting Style : Through Hole Package / Case : TO-204
Packaging : Tray    

Description

Transistor Polarity : NPN
Configuration : Single
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 7 V
Maximum DC Collector Current : 15 A
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray
DC Collector/Base Gain hfe Min : 10
Maximum Operating Frequency : 6 MHz


Application

·Designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers,DC-DC converters, inverters, or for inductive loads.






Specifications

Parameter
Symbol
Rating
Unit
VCBO
VCEV
VCEO
VEBO
I C
I B
P C
T J
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Collector Power Dissipation@TC=25
Junction Temperature
Storage Temperature
100
100
60
7
15
7
115
200
-65~200
V
V
V
V
A
A
W







Description

2N3055A specifications:

·Excellent Safe Operating Area
·DC Current Gain-hFE=20-70@IC = 4A
·Collector-Emitter Saturation Voltage- : V CE(sat) = 1.1 V(Max)@ IC = 4A
·Complement to Type MJ2955A




Parameters:

Technical/Catalog Information2N3055A
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)15A
Power - Max115W
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A, 4V
Vce Saturation (Max) @ Ib, Ic1.1V @ 400mA, 4A
Frequency - Transition6MHz
Current - Collector Cutoff (Max)700A
Mounting TypeChassis Mount
Package / CaseTO-204, TO-3
PackagingTray
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names 2N3055A
2N3055A



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
LED Products
Static Control, ESD, Clean Room Products
Fans, Thermal Management
Motors, Solenoids, Driver Boards/Modules
Crystals and Oscillators
Discrete Semiconductor Products
View more