Features: • SILICON PLANAR EPITAXIAL DUAL PNP TRANSISTOR• HERMETIC CERAMIC SURFACE MOUNT PACKAGE• SCREENING OPTIONS AVAILABLE• HIGH SPEED, LOW SATURATION SWITCHApplicationHermetically sealed dual surface mount version of the popular 2N2894 for high reliability applications ...
2N2894DCSM: Features: • SILICON PLANAR EPITAXIAL DUAL PNP TRANSISTOR• HERMETIC CERAMIC SURFACE MOUNT PACKAGE• SCREENING OPTIONS AVAILABLE• HIGH SPEED, LOW SATURATION SWITCHApplicationHer...
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• SILICON PLANAR EPITAXIAL DUAL PNP TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT PACKAGE
• SCREENING OPTIONS AVAILABLE
• HIGH SPEED, LOW SATURATION SWITCH
Hermetically sealed dual surface mount version of the popular 2N2894 for high reliability applications requiring small size and low weight devices.
VCBO |
collector-base voltage |
-12V |
VCEO |
collector-emitter voltage |
-12V |
VEBO |
emitter-base voltage |
-4V |
IC |
collector current |
200mA |
PD |
Total Device Dissipation @ TA =25°C Derate above 25°C |
360 mW |
2.06mW / °C | ||
PD |
Total Device Dissipation @ TC =25°C Derate above 25°C |
1.2W |
6.85mW / °C | ||
Tstg,Tj |
Operating and Storage Temperature Range |
65 to +200°C |