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2N2609

JFET P-Ch Junc FET

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SeekIC No. : 00144668 Detail

2N2609: JFET P-Ch Junc FET

2N2609 Data Sheet

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Part Number:
2N2609
Mfg:
Central Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain Current (Idss at Vgs=0) : 2 mA to 10 mA
Gate-Source Breakdown Voltage : 30 V Continuous Drain Current : 10 mA
Configuration : Single Mounting Style : Through Hole
Package / Case : TO-18    

Description

Drain Source Voltage VDS :
Packaging :
Configuration : Single
Transistor Polarity : P-Channel
Gate-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Continuous Drain Current : 10 mA
Package / Case : TO-18
Drain Current (Idss at Vgs=0) : 2 mA to 10 mA


Specifications

Parameters / Test Conditions Symbol Value Units
Gate-Source Voltage VGSS 30 V

Power Dissipation(1)
TA = +25
PD 300 mW
Operating Junction & Storage Temperature Range Top , Tstg -65 to +200 °C
(1) Derate linearly 1.71 mW/ °C for TA > +25°C. 
 


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