2N2484

Transistors Bipolar (BJT) NPN Low Lvl SS

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2N2484 Picture
SeekIC No. : 00206645 Detail

2N2484: Transistors Bipolar (BJT) NPN Low Lvl SS

floor Price/Ceiling Price

US $ .58~.7 / Piece | Get Latest Price
Part Number:
2N2484
Mfg:
Central Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.7
  • $.67
  • $.61
  • $.58
  • Processing time
  • 15 Days
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  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/8/14

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 0.05 A
DC Collector/Base Gain hfe Min : 200 Configuration : Single
Maximum Operating Frequency : 60 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-18
Packaging : Box    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Packaging : Box
DC Collector/Base Gain hfe Min : 200
Package / Case : TO-18
Maximum Operating Frequency : 60 MHz
Maximum DC Collector Current : 0.05 A


Features:

· Low current (max. 50 mA)
· Low voltage (max. 60 V)





Application

· General purpose switching and amplification
· High performance (low-level), low-noise amplifier applications both for direct current and frequencies up to 100 MHz.






Pinout

  Connection Diagram




Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
-
60
V
VCEO
collector-emitter voltage
open base
-
60
V
VEBO
emitter-base voltage
open collector
-
6
V
IC
collector current (DC)
-
50
mA
ICM
peak base current
-
100
mA
IBM
peak base current
-
50
mA
Ptot
total power dissipation
Tamb 25 °C
-
360
mW
Tstg
storage temperature
-65
+150
°C
Tj
junction temperature
-
200
°C
Tamb
operating ambient temperature
-65
+150
°C





Description

NPN transistor in a TO-18; SOT18 metal package.

The 2N2484 is NPN general purpose transistor. The device is suitable for general purpose switching and amplification, high performance, low noise amplifier applications both for direct current and frequencies up to 100MHz.

The features of 2N2484 can be summarized as:(1)Low current (max. 50 mA); (2)Low voltage (max. 60 V).

The absolute maximum ratings of 2N2484 are:(1)collector-base voltage,open emitter :60 V; (2)collector-emitter voltage,open base:60 V; (3)emitter-base voltage,open collector:6V; (4)collector current (DC):50 mA; (5)peak collector current:100 mA; (6)peak base current:50 mA; (7)total power dissipation Tamb 25 °C:360 mW; (8)storage temperature:-65°C +150°C; (9)junction temperature:200 °C; (10)operating ambient temperature:-65°C +150°C.

The electrical characteristics of the 2N2484 are:(1)collector cut-off current:10nA;(2)emitter cut-off current:10nA;(3)DC current gain:10nA;(4)collector-emitter saturation voltage:350mV;(5)base emitter voltage:500mV to 700mV;(6)collector capacitance:6pF;(7)emitter capacitance:9pF;(8)transition frequency:IC=50uA..15MHz, IC=500uA..60MHz to 80MHz.

If you want to know more information such as the electrical characteristics about the 2N2484, please download the datasheet in www.seekic.com or www.chinaicmart.com .






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