Transistors Bipolar (BJT) NPN Low Lvl SS
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 60 V |
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 0.05 A |
DC Collector/Base Gain hfe Min : | 200 | Configuration : | Single |
Maximum Operating Frequency : | 60 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-18 |
Packaging : | Box |
· General purpose switching and amplification
· High performance (low-level), low-noise amplifier applications both for direct current and frequencies up to 100 MHz.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VCBO |
collector-base voltage |
open emitter |
- |
60 |
V |
VCEO |
collector-emitter voltage |
open base |
- |
60 |
V |
VEBO |
emitter-base voltage |
open collector |
- |
6 |
V |
IC |
collector current (DC) |
- |
50 |
mA | |
ICM |
peak base current |
- |
100 |
mA | |
IBM |
peak base current |
- |
50 |
mA | |
Ptot |
total power dissipation |
Tamb 25 °C |
- |
360 |
mW |
Tstg |
storage temperature |
-65 |
+150 |
°C | |
Tj |
junction temperature |
- |
200 |
°C | |
Tamb |
operating ambient temperature |
-65 |
+150 |
°C |
The 2N2484 is NPN general purpose transistor. The device is suitable for general purpose switching and amplification, high performance, low noise amplifier applications both for direct current and frequencies up to 100MHz.
The features of 2N2484 can be summarized as:(1)Low current (max. 50 mA); (2)Low voltage (max. 60 V).
The absolute maximum ratings of 2N2484 are:(1)collector-base voltage,open emitter :60 V; (2)collector-emitter voltage,open base:60 V; (3)emitter-base voltage,open collector:6V; (4)collector current (DC):50 mA; (5)peak collector current:100 mA; (6)peak base current:50 mA; (7)total power dissipation Tamb 25 °C:360 mW; (8)storage temperature:-65°C +150°C; (9)junction temperature:200 °C; (10)operating ambient temperature:-65°C +150°C.
The electrical characteristics of the 2N2484 are:(1)collector cut-off current:10nA;(2)emitter cut-off current:10nA;(3)DC current gain:10nA;(4)collector-emitter saturation voltage:350mV;(5)base emitter voltage:500mV to 700mV;(6)collector capacitance:6pF;(7)emitter capacitance:9pF;(8)transition frequency:IC=50uA..15MHz, IC=500uA..60MHz to 80MHz.
If you want to know more information such as the electrical characteristics about the 2N2484, please download the datasheet in www.seekic.com or www.chinaicmart.com .