2N2484

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Packaging : Box
DC Collector/Base Gain hfe Min : 200
Package / Case : TO-18
Maximum Operating Frequency : 60 MHz
Maximum DC Collector Current : 0.05 A


Features:

· Low current (max. 50 mA)
· Low voltage (max. 60 V)




Application

· General purpose switching and amplification
· High performance (low-level), low-noise amplifier applications both for direct current and frequencies up to 100 MHz.

Pinout






Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter	-	60	V
VCEO	collector-emitter voltage	open base	-	60	V
VEBO	emitter-base voltage	open collector	-	6	V
IC	collector current (DC)		-	50	mA
ICM	peak base current		-	100	mA
IBM	peak base current		-	50	mA
Ptot	total power dissipation	Tamb 25 °C	-	360	mW
Tstg	storage temperature		-65	+150	°C
Tj	junction temperature		-	200	°C
Tamb	operating ambient temperature		-65	+150	°C

Description

NPN transistor in a TO-18; SOT18 metal package.

The 2N2484 is NPN general purpose transistor. The device is suitable for general purpose switching and amplification, high performance, low noise amplifier applications both for direct current and frequencies up to 100MHz.

The features of 2N2484 can be summarized as:(1)Low current (max. 50 mA); (2)Low voltage (max. 60 V).

The absolute maximum ratings of 2N2484 are:(1)collector-base voltage,open emitter :60 V; (2)collector-emitter voltage,open base:60 V; (3)emitter-base voltage,open collector:6V; (4)collector current (DC):50 mA; (5)peak collector current:100 mA; (6)peak base current:50 mA; (7)total power dissipation Tamb 25 °C:360 mW; (8)storage temperature:-65°C +150°C; (9)junction temperature:200 °C; (10)operating ambient temperature:-65°C +150°C.

The electrical characteristics of the 2N2484 are:(1)collector cut-off current:10nA;(2)emitter cut-off current:10nA;(3)DC current gain:10nA;(4)collector-emitter saturation voltage:350mV;(5)base emitter voltage:500mV to 700mV;(6)collector capacitance:6pF;(7)emitter capacitance:9pF;(8)transition frequency:IC=50uA..15MHz, IC=500uA..60MHz to 80MHz.

If you want to know more information such as the electrical characteristics about the 2N2484, please download the datasheet in www.seekic.com or www.chinaicmart.com .