Features: • SILICON PLANAR EPITAXIAL NPNTRANSISTOR• HERMETIC TO18 PACKAGE• CECC SCREENING OPTIONSSpecifications VCBO Collector Base Voltage 40V VCEO Collector Emitter Voltage 15V VEBO Emitter Base Voltage 4.5V IC Collector Current 200mA PD Total Dev...
2N2369A1: Features: • SILICON PLANAR EPITAXIAL NPNTRANSISTOR• HERMETIC TO18 PACKAGE• CECC SCREENING OPTIONSSpecifications VCBO Collector Base Voltage 40V VCEO Collector Emitter ...
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VCBO | Collector Base Voltage | 40V |
VCEO | Collector Emitter Voltage | 15V |
VEBO | Emitter Base Voltage | 4.5V |
IC | Collector Current | 200mA |
PD |
Total Device Dissipation@ TA=25°C Derate above 25°C |
360mW 2.06mW / °C |
PD |
Total Device Dissipation@ TC=25°C Derate above 25°C |
680mW 6.85mW / °C |
TSTG, TJ | Operating and Storage Temperature Range | 65 to +200°C |
RJC | Thermal Resistance Junction-Case | 146°C/W |
RJA | Thermal Resistance Junction-Ambient | 486°C/W |