Transistor Polarity
: NPN
Configuration
: Single
Maximum Operating Temperature
: + 150 C
Mounting Style
: Through Hole
Maximum DC Collector Current
: 0.2 A
Packaging
: Box
DC Collector/Base Gain hfe Min
: 40
Maximum Operating Frequency
: 500 MHz
Package / Case
: TO-18
Collector- Emitter Voltage VCEO Max
: 15 V
Emitter- Base Voltage VEBO
: 4.5 V
Specifications
| Ratings |
Symbol |
All UB |
All others |
Unit |
| Collector-Emitter Voltage |
VCEO |
20 |
15 |
Vdc |
| Emitter-Base Voltage |
VEBO |
6.0 |
4.5 |
Vdc |
| Collector-Base |
Voltage VCBO |
40 |
40 |
Vdc |
| Collector-Emitter |
Voltage VCES |
40 |
40 |
Vdc |
|
|
@ TC = +25 C |
@ TC = +25 C |
|
|
Total Power Dissipation 2N2369A; 2N4449
All UA
All UB
All U |
PT |
0.50(1)
0.50(5)
0.40(6)
0.60(3) |
1.2(2)
1.2(2)
1.4(7)
1.5(4) |
W
W |
| Operating & Storage Junction Temperature Range |
Top, Tstg |
-65 to +200 |
-65 to +200 |
|
DescriptionThe 2N2369A is a kind of NPN silicon switching transistor.
There is some information about the maximum ratings of 2N2369A: (1)Collector-Emitter Voltage, VCEO: 15 Vdc; (2)Emitter-Base Voltage, VEBO: 4.5 Vdc; (3)Collector-Base Voltage, VCBO: 40 Vdc; (4)Collector-Emitter Voltage VCES: 40 Vdc; (5)Total Power Dissipation, PT: 0.50 W at TA=+25 and 1.2 W at TC=+25; (6)Operating & Storage Junction Temperature Range, Top, Tstg: -65 to +200; (7)Thermal Resistance, Junction-to-Case,RqJC: 146/W; (8)Thermal Resistance, Ambient-to-Case,RqJA: 325/W.
Then is about the electrical characteristics of 2N2369A (TA=25unless otherwise noted): (1)Collector-Emitter Breakdown Voltage at IC = 10 mAdc,V(BR)CEO: 15 Vdc min; (2)Collector-Emitter Cutoff Current at VCE = 20 Vdc,ICES: 0.4 uAdc max; (3)Emitter-Base Cutoff Current at VEB = 4.0 Vdc, IEBO: 0.25 uAdc max; (4)Collector-Base Cutoff Current at VCB = 4.0 Vdc, ICBO: 0.2 uAdc max; (5)Forward Current Transfer RatioI at IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz, |hfe|: 5.0 min and 10 max; (6)Output Capacitance at VCB = 5.0 Vdc, IE = 0, 100 kHz f1.0 MHz, Cobo: 4.0 pF max; (7)Input Capacitance at VEB = 0.5 Vdc, IC = 0, 100 kHzf1.0 MHz, Cibo: 5.0 pF.
Parameters: | Technical/Catalog Information | 2N2369A |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Current - Collector (Ic) (Max) | 200mA |
| Power - Max | 360mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 1V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Frequency - Transition | 675MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Through Hole |
| Package / Case | TO-18, Metal Case |
| Packaging | Tube |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | 2N2369A
2N2369A
497 3107 5 ND
49731075ND
497-3107-5
|
2N2369A Data Sheet
