2N2369

Transistors Bipolar (BJT) TO-18 NPN FAST SW SS

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2N2369 Picture
SeekIC No. : 00211072 Detail

2N2369: Transistors Bipolar (BJT) TO-18 NPN FAST SW SS

floor Price/Ceiling Price

Part Number:
2N2369
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 15 V
Emitter- Base Voltage VEBO : 4.5 V Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 40 at 10 mA at 1 V Configuration : Single
Maximum Operating Frequency : 650 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-18
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Maximum DC Collector Current : 0.5 A
Packaging : Bulk
Package / Case : TO-18
Maximum Operating Frequency : 650 MHz
Collector- Emitter Voltage VCEO Max : 15 V
Emitter- Base Voltage VEBO : 4.5 V
DC Collector/Base Gain hfe Min : 40 at 10 mA at 1 V


Application

2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications.


Specifications

DESCRIPTION SYMBOL VALUE UNIT
Collector -Emitter Voltage VCEO 15 V
Collector -Emitter Voltage VCES 40 V
Collector -Base Voltage VCBO 40 V
Emitter -Base Voltage VEBO 4.5 V
Collector Current Continuous IC 200 mA
Collector Current Peak(10us pulse) IC(peak) 500 500mA
Power Dissipation@ Ta=25 degC PD 360 mW
Derate Above 25 deg C   2.06 mW/degC
@Tc=25 deg C PD 1.2 W
@Tc=100 deg C PD 0.68 W
Derate Above100 deg C   6.85 mW/degC
Operating And Storage Junction Tj, Tstg -65 to +200 deg C



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