Features: •DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTORS•HERMETIC CERAMIC SURFACE MOUNT PACKAGE•CECC SCREENING OPTIONS•SPACE QUALITY LEVELS OPTIONS•HIGH SPEED SATURATED SWITCHINGApplicationHermetically sealed dual surface mount version of the popular 2N2222A for high ...
2N2222ADCSM: Features: •DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTORS•HERMETIC CERAMIC SURFACE MOUNT PACKAGE•CECC SCREENING OPTIONS•SPACE QUALITY LEVELS OPTIONS•HIGH SPEED SATURATED...
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•DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTORS
•HERMETIC CERAMIC SURFACE MOUNT PACKAGE
•CECC SCREENING OPTIONS
•SPACE QUALITY LEVELS OPTIONS
•HIGH SPEED SATURATED SWITCHING
Hermetically sealed dual surface mount version of the popular 2N2222A for high reliability /space applications requiring small size and low weight devices.
PERSIDE | ||
VCBO | Collector Base Voltage | 75V |
VCEO | Collector Emitter Voltage (IB=0) | 40V |
VEBO | Emitter Base Voltage (IB=0) | 6V |
IC | Collector Current | 600mA |
PD | Total Device Dissipation | 350mW |
PD | Derate above 50°C | 2.0mW / °C |
TOTAL DEVICE | ||
RJA | Thermal Resistance Junction to Ambient | 130°C/W |
RJC | Thermal Resistance Junction to Case | 60°C/W |
TSTG,Tj | Storage Temperature,Operating Temp Range | 55 to 200°C |