2N2222A

Transistors Bipolar (BJT) NPN General Purpose

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SeekIC No. : 00203789 Detail

2N2222A: Transistors Bipolar (BJT) NPN General Purpose

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Part Number:
2N2222A
Mfg:
STMicroelectronics
Supply Ability:
5000

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 40 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 0.6 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Frequency : 300 MHz Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole Package / Case : TO-18
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Maximum Operating Frequency : 300 MHz
Collector- Emitter Voltage VCEO Max : 40 V
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Maximum DC Collector Current : 0.6 A
Maximum Operating Temperature : + 175 C
Package / Case : TO-18


Pinout

  Connection Diagram




Specifications

Ratings Symbol All Types Unit
Collector-Emitter Voltage VCEO 20 Vdc
Emitter-Base Voltage VCBO 75 Vdc
Collector-Base VEBO 6.0 Vdc
Collector-Emitter IC 40 mAdc

Total Power Dissipation @ TA = +25
2N2221A, L; 2N2222A, L(1)
2N2221AUA; 2N2222AUA(2)
2N2221AUB; 2N2222AUB(1)

PT 0.5
0.65
0.50
W
Operating & Storage Junction Temperature Range Top, Tstg -65 to +200





Parameters:

Technical/Catalog Information2N2222A
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)40V
Current - Collector (Ic) (Max)600mA
Power - Max800mW
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 150mA
Frequency - Transition300MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-18, Metal Case
PackagingBulk
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2N2222A
2N2222A
497 2598 ND
4972598ND
497-2598



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