2N2222

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 0.8 A
Maximum Operating Frequency : 250 MHz
Packaging : Box
Collector- Emitter Voltage VCEO Max : 30 V
Package / Case : TO-18
DC Collector/Base Gain hfe Min : 35 at 0.1 mA at 10 V


Features:

·Medium power ratings




Application

· Designed for general purpose switching and amplifier applications.




Specifications

Parameter	Test conditions	Min	Max	Uni
BVCEO	IC = 10 mA, IB = 0	40	---	V dc
BVCBO	IC = 10 A, IE = 0	75	---	V dc
BVEBO	IE = 10 A, IC = 0	6.0	---	V dc
ICBO	VCB = 50 V, IE = 0	---	10	nA dc
hFE	IC = 150 mA dc, VCE = 10 V	100	300	---

Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less than 300 s, duty cycle less than 2%.




Parameters:

Technical/Catalog Information	2N2222
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	800mA
Power - Max	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic	1.6V @ 50mA, 500mA
Frequency - Transition	250MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-18, Metal Case
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N2222 2N2222 497 3106 5 ND 49731065ND 497-3106-5